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Falah S Hasoon

from Golden, CO
Age ~72

Falah Hasoon Phones & Addresses

  • 19134 60Th Ave, Golden, CO 80403 (303) 425-5425
  • 6416 Simms St, Arvada, CO 80004 (303) 425-5425
  • 19134 W 60Th Ln, Golden, CO 80403 (303) 902-3251

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: High school graduate or higher

Publications

Us Patents

Thin-Film Solar Cell Fabricated On A Flexible Metallic Substrate

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US Patent:
7053294, May 30, 2006
Filed:
Jul 13, 2001
Appl. No.:
10/480880
Inventors:
John R. Tuttle - Frisco CO,
Rommel Noufi - Golden CO,
Falah S. Hasoon - Arvada CO,
Assignee:
Midwest Research Institute - Kansas City MO
International Classification:
H01L 31/336
H01L 31/392
US Classification:
136265, 136256, 136252, 136264, 136245, 136244, 438 94, 438 95, 438 98, 257431, 257461, 257464
Abstract:
A thin-film solar cell () is provided. The thin-film solar cell () comprises a flexible metallic substrate () having a first surface and a second surface. A back metal contact layer () is deposited on the first surface of the flexible metallic substrate (). A semiconductor absorber layer () is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer () forms a heterojunction structure and a grid contact () deposited on the heterjunction structure. The flexible metal substrate () can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (), depositing a semiconductor absorber layer () on the aluminum substrate (), and insulating the aluminum substrate () from the semiconductor absorber layer () to inhibit reaction between the aluminum substrate () and the semiconductor absorber layer ().

Zno/cu(Inga)Sesolar Cells Prepared By Vapor Phase Zn Doping

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US Patent:
7179677, Feb 20, 2007
Filed:
Sep 3, 2003
Appl. No.:
10/534217
Inventors:
Kannan Ramanathan - Golden CO,
Falah S. Hasoon - Golden CO,
Sarah E. Asher - Wheat Ridge CO,
James Dolan - Arvada CO,
James C. Keane - Lakewood CO,
Assignee:
Midwest Research Institute - Kansas City MO
International Classification:
H01L 31/18
US Classification:
438 95, 438 93, 438 94, 136262, 136264, 136265
Abstract:
A process for making a thin film ZnO/Cu(InGa)Sesolar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Selayer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Selayer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C. ; subjecting the heated layer of Cu(InGa)Seto an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.

Process For Producing Large Grain Cadmium Telluride

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US Patent:
5484736, Jan 16, 1996
Filed:
Sep 19, 1994
Appl. No.:
8/308362
Inventors:
Falah S. Hasoon - Arvada CO
Art J. Nelson - Longmont CO
Assignee:
Midwest Research Institute - Kansas City MO
International Classification:
H01L 3118
US Classification:
437 4
Abstract:
A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20. mu. m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10. sup. -6 torr. ; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20. mu. m.

Preparation Of Copper-Indium-Gallium-Diselenide Precursor Films By Electrodeposition For Fabricating High Efficiency Solar Cells

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US Patent:
5871630, Feb 16, 1999
Filed:
Jun 5, 1997
Appl. No.:
8/870081
Inventors:
Raghu N. Bhattacharya - Littleton CO
Falah S. Hasoon - Arvada CO
Holm Wiesner - Golden CO
James Keane - Lakewood CO
Rommel Noufi - Golden CO
Kannan Ramanathan - Golden CO
Assignee:
Davis, Joseph & Negley - Austin TX
International Classification:
C23C 2802
US Classification:
205192
Abstract:
A photovoltaic cell exhibiting an overall conversion efficiency of 13. 6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In. sub. 1-n Ga. sub. x)Se. sub. 2, with the ratio of Ga/(In+Ga) being approximately 0. 39.
Falah S Hasoon from Golden, CO, age ~72 Get Report